Fused silica wafer

Ricun provides high quality fused silica wafer in UV grade , optical grade and semiconductor grade . Fused silica wafer have many unique features such as high working temperature , high anti corrosion , good thermal conductivity , high optical transmittance and low dielectric loss , these special features make fused silica wafer suitable for semiconductor , photomask , microwave filter , optical lens , and optical fiber application . Quartz wafer can be fabricated in round or square shape , with a SEMI flat or without flat , one side polished or two sides polished , size from 1" to 8 " , thickness range from 0.4 , 0.5 , 0.7 , 1.1 to 3 mm , ultrasonic cleaning and cleanroom compatible wafer cassette package are also available. Additionally , we offer custom specifications designed to your unique needs including , dimension , SEMI. standard flats , surface roughness , edge profile , thickness , flatness , surface quality , cleanliness package method . We have amorphous quartz wafer in stock and can machine to your specification with high precision surface finish . Please contact us for further product information .

 

Technical parameters of 4 inch fused silica wafer

 

Property	Specification
Diameter	100 ± 0.2mm
Thickness	0.4(0.5)(1.0)(1.5) ± 0.02mm
O.F Length	Optional upon your request
Roughness	Ra<1.0nm
TTV	≤ 5 microns
Edge Form	Edge Grinding
Bow and Warp	≤ 10 microns
Strain Point	1,015℃
Annealing Point	1,015℃
OH Content	< 200 ppm
Material	Fused silica
Refractive Index (@632.8nm)	1.457
Remarks	All specifications above can be customized upon your request

 

Technical parameters of 6 inch fused silica wafer

Property	Specification
Diameter	150 ± 0.2mm
Thickness	0.4(0.5)(0.7)(1.0)(1.5) ± 0.02mm
O.F Length	Optional upon your request
Roughness	Ra<1.0nm
TTV	≤ 10 microns
Edge Form	Edge Grinding
Bow and Warp	≤ 10 microns
Strain Point	1,015℃
Annealing Point	1,015℃
OH Content	< 200 ppm
Material	Fused silica
Refractive Index (@632.8nm)	1.457
Remarks	All specifications above can be customized upon your request

Technical parameters of 8 inch fused silica wafer

Property	Specification
Diameter	200 ± 0.2mm
Thickness	0.4(0.5)(0.7)(1.0)(1.3)(1.5)(2.8)(3.0) ± 0.02mm
O.F Length	Optional upon your request
Roughness	Ra<1.0nm
TTV	≤ 10 microns
Edge Form	Edge Grinding
Bow and Warp	≤ 10 microns
Strain Point	1,015℃
Annealing Point	1,015℃
OH Content	< 200 ppm
Material	Fused silica
Refractive Index (@632.8nm)	1.457
Remarks	All specifications above can be customized upon your request